WebModified MOSFET Symbol Showing the Internal Devices Inductances - 3.5 - nH Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die - 4.5 - nH Internal Source Inductance L S Measured From the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad - 7.5 - nH Thermal Resistance Junction to Case R θ JC - - 2.5 o C/W WebIRF9640 Datasheet (PDF) - International Rectifier Description Power MOSFET (Vdss=-200V, Rds (on)=0.50ohm, Id=-11A) IRF9640 Datasheet (HTML) - International Rectifier IRF9640 Product details VDSS = -200V RDS (on) = 0.50 Ohm ID = -11A Similar Part No. - IRF9640 More results Similar Description - IRF9640 More results About International Rectifier
IRF9540 23A 100V P-Channel Power MOSFET - Datasheet
WebMOSFET symbol showing the integral reverse p - n junction diode---4.0 A Pulsed diode forward current a ISM-- -16 Body diode voltage VSD TJ = 25 °C, IS = -4.0 A, VGS = 0 V b---5.5V Body diode reverse recovery time trr TJ = 25 °C, IF = -4.0 A, dI/dt = 100 A/μsb - 82 160 ns Body diode reverse recovery charge Qrr - 0.15 0.30 μC WebTitle: page1.EPS Created Date: 7/10/1997 1:58:39 PM try another tack
PD - 94816 IRF4905PbF - Infineon
WebIRF9540 - IRF9540 P-Channel MOSFET Transistor Datasheet. Buy IRF9540. Technical Information - International Rectifier IRF9540 Datasheet WebJan 10, 2024 · The IRF9540 is the most common P-channel enhancement mode silicon gate MOSFET which is used by many electronics designers and hobbyists. It comes in a TO-220 package, so it’s a perfect choice for all kinds of commercial-industrial applications, and it performs best with low voltage high current applications. WebJul 29, 2024 · Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated Type Designator: IRF5210 Type of Transistor: MOSFET Type of Control Channel: P -Channel IRF5210 Specification IRF5210 Equivalent/Alternative IRF034, IRF044, IRF044SMD, … philipston swivel convertible chair